This research is the analysis of computer-based simulation design for the semiconductor laser diode. The paper is emphasized by analyzing the band structure and voltage-current characteristics of AlGaAs/GaAs for the laser diode. In this paper, bandgap variation temperature dependence, voltage-current (V-I), band diagram of the p-n junction for laser diode are discussed briefly. On the other hand, this paper is emphasized band structure design and voltage-current calculation using the mathematical model. The AlGaAs/GaAs device technology is used for high-speed optical communication.
Band structure design, Voltage Current, Bandgap, Temperature effect, Computer-based simulation
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